PSC1065B1 Series

650 V, 10 A SiC Schottky diode in bare die

Catalog

650 V, 10 A SiC Schottky diode in bare die

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction	Current - Average Rectified (Io)	Speed	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Nexperia USA Inc. PSC1065B1AZ	0 ns	60 µA	SiC (Silicon Carbide) Schottky	175 °C	10 A	500 mA	Surface Mount	Die	650 V	340 pF	1.8 V	Die

Catalog

650 V, 10 A SiC Schottky diode in bare die

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF) and improves the robustness expressed in a high IFSM.