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Nexperia USA Inc.

Series List(9390)

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Series	Category	# Parts	Status	Description

Standalone parts(5568)

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Part	Category	Description
Nexperia USA Inc. PBSS4350X-QZ	Discrete Semiconductor Products	TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R
Nexperia USA Inc. PDTD143XT-QR	Discrete Semiconductor Products	PDTD143XT-Q/SOT23/TO-236AB
Nexperia USA Inc. BAV99/DG/B3,235Obsolete	Discrete Semiconductor Products	DIODE ARRAY GEN PURP 100V 215MA
Nexperia USA Inc. 74HCS21PW-Q100J	Integrated Circuits (ICs)	74HCS21PW-Q100/SOT402/TSSOP14
Nexperia USA Inc. PMCB60XNEAYL	Discrete Semiconductor Products	SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc. LD6836TD/13P,125Obsolete	Integrated Circuits (ICs)	IC REG LINEAR 1.3V 300MA 5-TSOP
Nexperia USA Inc. 74HC688PW,112Obsolete	Integrated Circuits (ICs)	IC ID COMPARATOR 8BIT 20-TSSOP
Nexperia USA Inc. PDZ6.2B-QZ	Discrete Semiconductor Products	DIODE ZENER 6.2V 400MW SOD323
Nexperia USA Inc. BUK4D38-20PH	Discrete Semiconductor Products	SMALL SIGNAL MOSFETS FOR AUTOMOT
Nexperia USA Inc. 74ALVT16373DGG,512Obsolete	Integrated Circuits (ICs)	IC D-TYPE TRANSP 8:8 48-TSSOP

Series	Category	# Parts	Status	Description

PBLS6023D60 V, 1.5 A PNP BISS loadswitch	Bipolar Transistor Arrays, Pre-Biased	1	Active	PNP low VCEsatBreakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
PBRN11340 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ	Bipolar (BJT)	2	Active	NPN low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PBRN12340 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ	Bipolar (BJT)	2	Active	NPN low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PBRP11340 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ	Bipolar (BJT)	2	Active	PNP low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PBRP12340 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ	Bipolar (BJT)	1	Active	PNP low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PBSM5240PFH40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET	Special Purpose	1	Obsolete	Combination of PNP low VCEsatBreakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
PBSS251515 V low VCEsat NPN/PNP transistor	Single Bipolar Transistors	7	Active	NPN/PNP low VCEsattransistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. .
PBSS2515YPN15 V low VCEsat NPN/PNP transistor	Discrete Semiconductor Products	1	Active	NPN/PNP low VCEsattransistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. .
PBSS2540M40 V, 0.5 A NPN low VCEsat (BISS) transistor	Single Bipolar Transistors	1	Active	Low VCEsatNPN transistor in a SOT883 leadless ultra small plastic package.
PBSS2540MB40 V, 0.5 A NPN low VCEsat (BISS) transistor	Single Bipolar Transistors	1	Active	NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.