40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ
| Part | Transistor Type | Mounting Type | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Resistor - Base (R1) | Vce Saturation (Max) @ Ib, Ic [Max] | Resistor - Emitter Base (R2) | Current - Collector Cutoff (Max) [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | NPN - Pre-Biased | Surface Mount | TO-236AB | 40 V | 500 | 600 mA | 250 mW | 2.2 kOhm | 1.15 V | 10 kOhms | 500 nA | SC-59 SOT-23-3 TO-236-3 |
Freescale Semiconductor - NXP | NPN - Pre-Biased | Surface Mount | TO-236AB | 40 V | 280 | 600 mA | 250 mW | 2.2 kOhm | 1.15 V | 2.2 kOhms | 500 nA | SC-59 SOT-23-3 TO-236-3 |