Catalog
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Description
AI
NPN low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
| Part | Package / Case | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Mounting Type | Resistor - Base (R1) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | 250 mW | 500 nA | 600 mA | 40 V | NPN - Pre-Biased | 1.15 V | 500 | 10 kOhms | Surface Mount | 2.2 kOhm | TO-236AB |
 Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | 250 mW | 500 nA | 600 mA | 40 V | NPN - Pre-Biased | 1.15 V | 280 | 2.2 kOhms | Surface Mount | 2.2 kOhm | TO-236AB |