Catalog
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ
Description
AI
NPN low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ
| Part | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Power - Max [Max] | Supplier Device Package | Mounting Type | Current - Collector Cutoff (Max) [Max] | Resistor - Base (R1) | Package / Case | Current - Collector (Ic) (Max) [Max] | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.15 V | NPN - Pre-Biased | 250 mW | TO-236AB | Surface Mount | 500 nA | 1 kOhms | SC-59 SOT-23-3 TO-236-3 | 600 mA | 1 kOhm | 180 | 40 V |
Nexperia USA Inc. | 1.15 V | NPN - Pre-Biased | 250 mW | TO-236AB | Surface Mount | 500 nA | 1 kOhms | SC-59 SOT-23-3 TO-236-3 | 600 mA | 10 kOhms | 500 | 40 V |