Catalog
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Description
AI
PNP low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
| Part | Current - Collector (Ic) (Max) [Max] | Grade | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Base (R1) | Supplier Device Package | Resistor - Emitter Base (R2) | Transistor Type | Mounting Type | Qualification | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 600 mA | Automotive | 250 mW | 500 nA | SC-59 SOT-23-3 TO-236-3 | 180 | 2.2 kOhm | TO-236AB | 2.2 kOhms | PNP - Pre-Biased | Surface Mount | AEC-Q101 | 40 V | 750 mV |