
Catalog
40 V, 0.5 A NPN low VCEsat (BISS) transistor
Description
AI
NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.

40 V, 0.5 A NPN low VCEsat (BISS) transistor
40 V, 0.5 A NPN low VCEsat (BISS) transistor
| Part | Transistor Type | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Qualification | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Grade | Package / Case | Operating Temperature | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | NPN | DFN1006B-3 | 500 mA | 250 mW | 40 V | AEC-Q100 | 450 MHz | 100 µA | Automotive | 3-XFDFN | 150 °C | 200 | Surface Mount |