Catalog
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ
Description
AI
PNP low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ
| Part | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Base (R1) | Current - Collector Cutoff (Max) [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Resistor - Emitter Base (R2) | Package / Case | Current - Collector (Ic) (Max) [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 250 mW | 750 mV | PNP - Pre-Biased | 130 | 1 kOhms | 500 nA | Surface Mount | 40 V | 1 kOhm | SC-59 SOT-23-3 TO-236-3 | 600 mA | TO-236AB |
Nexperia USA Inc. | 250 mW | 750 mV | PNP - Pre-Biased | 230 hFE | 1 kOhms | 500 nA | Surface Mount | 40 V | 10 kOhms | SC-59 SOT-23-3 TO-236-3 | 600 mA | TO-236AB |