Microchip Technology

The MMA040PP5E is the evaluation pcb for the GaAs MMIC distributed LNA in a leadless 5 mm × 5 mm surface-mount package that operates operates between DC and 27 GHz. It is ideal for test instrumentation and electronic warfare applications. The amplifier provides a flat gain of 16 dB, 2 dB noise figure, and 16 dBm of output power at 1 dBm gain compression while requiring only 60 mA from an 8 V supply. Output IP3 is typically 28 dBm.

The MMA041AA is a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) Pseudomorphic HighElectron Mobility Transistor (PHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation, defense, aerospace, and communications infrastructure applications. The amplifier provides a flat gain of 18.5 dB, 2 dB noise figure, and 22 dBm of output power at 1 dB gain compression, and 36 dBm output IP3. The MMA041AA amplifier features RF I/Os that are internally matched to 50Ω, which allows for easy integration into multi-chip modules (MCMs).

The MMA042AA is a distributed amplifier die that operates between 2 GHz and 26 GHz. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier is ideal for test instrumentation, defense, and space applications.

The MMA043PP4 is a low noise wideband amplifier in a leadless 4 mm × 4 mm SMT package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply.

The MMA044AA is a low noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply.. The P1dB output power of 16 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The amplifier also features RF ports that are DC blocked and internally matched to 50Ω, which allows for easy integration into multi-chip modules (MCMs).

MMA052PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron-mobility transistor (pHEMT) distributed self-biased amplifier in plastic package form that operates between DC and 24 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 14 dB of gain with a rising slope, 3.5 dB noise figure, output IP3 of 35 dBm, and 28 dBm of output power at 3dB gain compression at 10 GHz. The MMA052PP45 amplifier features RF I/Os that are internally matched to 50 Ω, which is ideal for any surface mount technology (SMT) assembly equipment.

The MMA052PP45TR is a distributed, self-biased, amplifier in plastic package form, that operates between DC and 24GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 14 dB of gain with a rising slope, 3.5 dB noise figure, output IP3 of 35 dBm, and 27 dBm of output power at 3 dB gain compression at 10 GHz. The MMA052PP45TR is available in Tape and Reel format.

The MMA142AA is a self-biased (GaAs) MMIC pHEMT, distributed amplifier die that operates between 1 GHz and 34 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 1 dB positive gain slope with a typical gain of 15 dB, 3 dB noise figure.GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 1 dB positive gain slope with a typical gain of 15 dB, 3 dB noise figure, 16 dBm of output power at 1 dB gain compression, and 28 dBm output IP3 at 18 GHz