| Power Management (PMIC) | 2 | Active | The MM5450 and MM5451 LED display drivers are monolithic MOS ICs fabricated in an N-Channel, metal-gate process. The technology produces low-threshold, enhancement-mode, and ion-implanted depletion-mode devices.
A single pin controls the LED display brightness by setting a reference current through a variable resistor connected to the supply. |
| Integrated Circuits (ICs) | 5 | Active | |
| Sensors, Transducers | 1 | Obsolete | |
| RF Amplifiers | 1 | Unknown | The MMA016AA is a GaAs MMIC, power-selectable wideband amplifier die that operates between DC and 16 GHz. The amplifier provides a gain 13 dB to 16 dB. The MMA016AA provides 29 dBm P3dB at the highest power option, while requiring only 80 mA from a 4 V supply. Gain flatness is excellent, varying less than 1.4 dB over the –40 °C to 85 °C temperature range. The MMA016AA is ideally suited for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. |
| RF Amplifiers | 1 | Unknown | The MMA021AA is a two-stage, high gain amplifier, designed to be insensitive to process or temperature changes. Its high isolation makes it ideal for applications requiring both gain and isolation. The device can be operated at 5V 135mA, or 3.3V 108mA for integration with mixed-signal circuitry.
The MMA021AA MMIC Amplifier with Integrated Bias is designed for digital radio, spread spectrum, electronic warfare, and broadband communication systems. It can be used as a LO or mixer isolation amplifier, a transmit amplifier in a radio system, or as a general isolation and gain block amplifier. |
| RF Amplifiers | 1 | Unknown | The MMA025AA is a low noise amplifier designed for low noise, flat gain, and good return loss to 30GHz. The amplifier typically has 2.5dB NF and 18dB gain from 6-20GHz, and 16dB gain from 0.04-30GHz. The amplifier is most often found in applications in RF and microwave communications, test equipment and military systems. By using specific external components, the bandwidth of operation can be extended below 40MHz. |
| RF Amplifiers | 1 | Unknown | The MMA026AA (DC-30 GHz) low noise amplifier is designed for flat gain, excellent return loss, and medium power. The amplifier typically provides 10.25±0.75dB gain and 21dBm Psat from 40MHz to 30GHz. The MMA026AA is used RF and microwave communications, test equipment and military systems. By using specific external components, the bandwidth of operation can be extended below 40MHz. is designed for flat gain, excellent return loss, and medium power. The amplifier typically provides 10.25dB gain and 21dBm Psat. |
| RF and Wireless | 1 | Unknown | The MMA030AA is a low noise amplifier featuring Microchip’s PLFX (Passive Low Frequency eXtension) circuitry designed to reduce the integration cost of the amplifier. PLFX isolates the amplifier from bias inductor resonances, allowing use of a less-expensive coil.
The MMA030AA is ideally suited for applications found in RF and microwave communications, test equipment and military systems. |
| RF Amplifiers | 1 | Unknown | The MMA032AA is a DC - 45 GHz distributed amplifer die featuring Microchip's PLFX (Passive Low Frequency eXtension) circuitry designed to reduce the integration cost of the amplifier. PLFX isolates the amplifier from bias inductor resonances, allowing use of a less-expensive coil.
The MMA032AA is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By using specific external components, the bandwidth of operation can be extended below 40MHz. |
| RF Amplifiers | 1 | Unknown | The MMA034AA is a DC to 65 GHz distrubtued amplifier. The amplifier features Microsemi PLFX (Passive Low Frequency eXtension) circuitry designed to reduce the integration cost of the amplifier. PLFX isolates the amplifier from bias inductor resonances, allowing use of a less-expensive coil. |
