MMA041PP5E-Low-Noise-Amp-Eval Series

Evaluation PCB, MMA041PP5, LNA

Catalog

Evaluation PCB, MMA041PP5, LNA

Part	Package / Case	Gain	P1dB	Noise Figure	Test Frequency [Max]	Test Frequency [Min]	Supplier Device Package	Voltage - Supply	RF Type	Mounting Type	Current - Supply	Frequency [Max]	Frequency [Min]	Type	Supplied Contents	For Use With/Related Products
Microchip Technology MMA041PP5/TR	32-TFQFN Exposed Pad	17 dBi	22 dBm	2.5 dB	12 GHz	6 GHz	32-QFN (5x5)	7 V	General Purpose	Surface Mount	150 mA
Microchip Technology MMA041AA	Die	18 dBi	22.5 dBm	2.5 dB	6 GHz	0 Hz	Die	7 V	General Purpose		150 mA	26 GHz	0 Hz
Microchip Technology MMA041PP5E														Amplifier	Board(s)	MMA041PP5

Catalog

Evaluation PCB, MMA041PP5, LNA

Key Features

- Broadband performance: DC to 26 GHz

- High gain: 18.5 dB

- Low noise figure: 2 dB

- High output IP3: + 36 dBm

- High input power: + 22 dBm

- Positive supply : +6V at 150 mA

- 50Ω matched input/output

- Die size: 3.0 mm × 1.35 mm × 0.1 mm

Description

The MMA041AA is a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) Pseudomorphic HighElectron Mobility Transistor (PHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation, defense, aerospace, and communications infrastructure applications. The amplifier provides a flat gain of 18.5 dB, 2 dB noise figure, and 22 dBm of output power at 1 dB gain compression, and 36 dBm output IP3. The MMA041AA amplifier features RF I/Os that are internally matched to 50Ω, which allows for easy integration into multi-chip modules (MCMs).