| TVS Diodes | 2 | Active | |
| TVS Diodes | 2 | Active | |
| TVS Diodes | 1 | Obsolete | |
| RF Diodes | 8 | Active | The first is MRI receiver protection from high-RF energy fields, including long RF pulses and RF spike pulses present in most MRI machines. The MML4400 series acts as a passive protector (limiter) for the MRI receiver’s low-noise amplifier (LNA). The diode assembly exhibits extremely low insertion loss, both in the on state (high power present) and the off state (receiver power present), so that the receiver’s noise figure is not increased by the protector circuit.
The second principal application is passive switching of surface-coil detuning and blocking circuits. In this case, the flow of the loop current during transmitter pulses turns on the diodes, without the use of a switch driver. |
| RF Diodes | 8 | Active | The MMP4400 series are high-voltage, high-power (cathode base) PIN diodes. These high-resistivity silicon devices are glass passivated for high stability and reliability, and have been proven by thousands of device hours in high-reliability systems |
| Attenuators | 1 | Unknown | The MMS004AA is a low-power high-attenuation DC-50 GHz PHEMT FET attenuator. The voltage controlled MMS004AA attenuator is ideal for high frequency applications in test equipment, commercial and military systems. The attenuator is especially suited for applications needing a large amount of adjustable attenuation and fast attenuation control from DC to millimeter frequencies. |
| RF Switches | 2 | Active | The MMS006AA is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high electron-mobility transistor (pHEMT) single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switch in a compact die size: 0.85 mm × 1.30 mm × 0.1. The switch delivers over 40 dB of isolation across the DC-to-20 GHz band while maintaining a low insertion loss of less than 2.0 dB. The switch is also available in a plastic leadless 3 mm x 3 mm smt package. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). |
| RF and Wireless | 1 | Active | The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch chip. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.6 dB. The RF ports are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs). |
| Development Boards, Kits, Programmers | 2 | Active | The MMS008PP3 is the packaged version of the MMS008AA; a DC-to-8 GHz, non-reflective single-pole 4 throw (SP4T) switch in a plastic leadless 3 mm × 3 mm SMT QFN package. The packaged switch delivers an average of 40 dB of isolation across the DC-to-8 GHz band while maintaining a low insertion loss of 1.8 dB. |
| Zener | 1 | Active | The 1N4099UR-1 through 1N4135UR-1 and 1N4614UR-1 through 1N4627UR-1 series are 500 mW, Zener voltage regulators in the surface mount, glass DO-213AA package. Voltages from 1.8 to 100V in 5%, 2%, and 1% tolerances are available. They are constructed with an internal metallurgical bond and are mil-qualified up to the JANS level for high reliability applications. |
