M
Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
 Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
 Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
 Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
 Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
 Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
 Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
 Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
MNS1N4567AUR-1-TC-Zener-DiodeZener Diode 500mW, Surface Mount DO-213AA | Single Zener Diodes | 1 | Active | Missing |
MNS1N4568DUR-1-TC-Zener-DiodeZener Diode 6.4V, 500mW, ±5% Surface Mount DO-213AA | Zener | 1 | Active | Missing |
MNS2N2222AUBP-Transistor-PINDNPN Silicon Switching 50V, 0.8A | Single Bipolar Transistors | 2 | Active | This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
MNS2N3501P-Transistor-PINDNPN Silicon Amplifier 100V to 150V, 0.3A to 0.5A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements. |
| Crystals, Oscillators, Resonators | 2 | Active | ||
MO-9000AMEMS based XO | Oscillators | 8 | Active | MEMS based XO |
MO-9100AMEMS based XO | Crystals, Oscillators, Resonators | 2 | Active | MEMS based XO |
MO-9150AMEMS based XO | Oscillators | 2 | Active | MEMS based XO |
MO-9200AMEMS based XO | Crystals, Oscillators, Resonators | 9 | Active | MEMS based XO |
MO-9250AMEMS based XO | Crystals, Oscillators, Resonators | 1 | Active | MEMS based XO |
