M
Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JAN2N3740-TransistorPNP Silicon Power -60V to -80V, 4A | Single Bipolar Transistors | 3 | Active | This specification covers the performance requirements for power PNP silicon 2N3740 and 2N3741 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/441 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/441. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA. The device package for the encapsulated device type are as follows: TO-66 and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/441. |
JAN2N3743-TransistorPNP Silicon high-voltage -200V to -300V, -0.2A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for PNP, silicon, high-voltage 2N3743, 2N4930 and 2N4931 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/397. Two levels of product assurance (JANHC and JANKC) for die are provided for each unencapsulated device. |
JAN2N3766-TransistorNPN Silicon Power 60V to 80V, 4A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA. |
JAN2N3771-TransistorMIL-PRF-19500/413 | Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon, high-power 2N3771 and 2N3772 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/413. The device package outline for this specification sheet is a TO-204AA (formerly TO-3) for all encapsulated device types. |
JAN2N3867P-Transistor-PINDPNP Silicon Low-Power -40V to -60V, -3A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. |
JAN2N3867S-TransistorPNP Silicon Low-Power -40V to -60V, -3A | Transistors | 3 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. The device package outlines are as follows: TO- 5, TO-39 and U4 (SMD .22) suffix for all encapsulated device types. For unencapsulated devices. |
JAN2N3867U4-TransistorPNP Silicon Low-Power -40V to -60V, -3A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. |
JAN2N3868-TransistorPNP Silicon Low-Power -40V to -60V, -3A | Single Bipolar Transistors | 1 | Unknown | This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. |
JAN2N3868U4-TransistorPNP Silicon Low-Power -40V to -60V, -3A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. |
JAN2N3879-TransistorNPN Silicon Power 75V, 7A | Bipolar (BJT) | 1 | Unknown | This specification covers the performance requirements for NPN, silicon, power, 2N3879 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/526. The device package outline is a modified TO-213AA (similar to a TO-66). |
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
 Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
 Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
 Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
 Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
 Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
 Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
 Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |