JAN2N3867P-Transistor-PIND Series

PNP Silicon Low-Power -40V to -60V, -3A

Catalog

PNP Silicon Low-Power -40V to -60V, -3A

Part	Transistor Type	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Supplier Device Package
Microchip Technology JAN2N3867P	PNP	1 W	TO-205AA TO-5-3 Metal Can	3 A	MIL-PRF-19500/350	-55 °C	200 °C	1.5 V	40 V	Through Hole	1 µA	50	Military	TO-5AA

Catalog

PNP Silicon Low-Power -40V to -60V, -3A

Key Features

- The device package outlines are as follows: TO- 5, TO-39 and U4 (SMD .22) suffix for all encapsulated device types.

Description

This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels.