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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JAN2N3996-TransistorNPN Silicon High-Speed Power 80V, 10A | Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die. |
JAN2N3999-TransistorNPN Silicon High-Speed Power 80V, 10A | Transistors | 2 | Active | This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die. |
JAN2N4033UA-TransistorPNP Silicon Switching -80V, -1A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JAN2N4234L-TransistorPNP Silicon Amplifier -40V to -80V, -1A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, amplifier, 2N4234, 2N4235 and 2N4236 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/580. |
JAN2N4449UA-TransistorNPN Switching 15V to 20V, 0.1A | Bipolar (BJT) | 2 | Active | This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JAN2N4449UB-TransistorNPN Switching 15V to 20V, 0.1A | Bipolar (BJT) | 2 | Active | This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JAN2N4854U-TransistorNPN PNP Silicon Dual Complementary 40V, 0.6A | Transistors | 4 | Active | This specification covers the performance requirements for unitized, dual 2N3838, 2N4854 and 2N4854U transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/421. |
JAN2N5003-TransistorMIL-PRF-19500/535 | Single Bipolar Transistors | 1 | Active | This 2N5003 high speed NPN transistor, is rated at 5 amps and military qualified up to a JANTXV level for high-reliability applications. This transistor is available in a TO-210AA (TO-59) isolated package with a 180 degree lead orientation. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications. |
JAN2N5151U3-TransistorPNP Silicon Power -80V, -2A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. |
JAN2N5152U3-TransistorMIL-PRF-19500/544 | Bipolar (BJT) | 1 | Active | This family of 2N5152 and 2N5154 silicon PNP transistors are military Radiation Hardness Assurance qualified up to a JANSF level for high-reliability applications. These transistors are available in a TO-205AA (TO-5), a TO-205AD (TO-39) and a U3 surfacemount package. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications. |