JAN2N3743-Transistor Series

PNP Silicon high-voltage -200V to -300V, -0.2A

Catalog

PNP Silicon high-voltage -200V to -300V, -0.2A

Part	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Grade	Voltage - Collector Emitter Breakdown (Max)	Qualification	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Microchip Technology JAN2N3743	Through Hole	250 nA	1 W	1.2 V	TO-39 (TO-205AD)	Military	300 V	MIL-PRF-19500/397	200 mA	TO-205AD TO-39-3 Metal Can	50 hFE	PNP

Catalog

PNP Silicon high-voltage -200V to -300V, -0.2A

Key Features

- The device package outlines are as follows: TO-39 , and surfacemount U4 package for all encapsulated device types.

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/397.

Description

This specification covers the performance requirements for PNP, silicon, high-voltage 2N3743, 2N4930 and 2N4931 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/397. Two levels of product assurance (JANHC and JANKC) for die are provided for each unencapsulated device.