JAN2N3867S-Transistor Series

PNP Silicon Low-Power -40V to -60V, -3A

Catalog

PNP Silicon Low-Power -40V to -60V, -3A

Part	Power - Max [Max]	Current - Collector (Ic) (Max)	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Grade	Package / Case	Qualification
Microchip Technology 2N3867S	1 W	3 mA	PNP	TO-39 (TO-205AD)	40 hFE	1.5 V	40 V	Through Hole	100 µA
Microchip Technology 2N3867	1 W	3 mA	PNP	TO-5	40 hFE	1.5 V	40 V	Through Hole	100 µA
Microchip Technology JAN2N3867S	1 W	3 mA	PNP	TO-39 (TO-205AD)	40 hFE	1.5 V	40 V	Through Hole	100 µA	Military	TO-205AD TO-39-3 Metal Can	MIL-PRF-19500/350

Catalog

PNP Silicon Low-Power -40V to -60V, -3A

Key Features

- The device package outlines are as follows: TO- 5, TO-39 and U4 (SMD .22) suffix for all encapsulated device types.

Description

This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. The device package outlines are as follows: TO- 5, TO-39 and U4 (SMD .22) suffix for all encapsulated device types. For unencapsulated devices.