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Microchip Technology
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JAN2N2432UB-TransistorNPN Silicon Low-Power 30V to 45V, 0.1A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for low power, high speed chopper, NPN silicon 2N2432 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/313. Two levels of product assurance (JANHC and JANKC) are provided for unencapsulated die. |
JAN2N2604-TransistorPNP Silicon Low-Power -60V, -0.03A | Transistors | 1 | Active | This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/354. RHA level designators "M", "D", "P", "L", "R", "F’, "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JAN2N2605-TransistorPNP Silicon Low-Power -60V, -0.03A | Discrete Semiconductor Products | 3 | Active | This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/354. RHA level designators "M", "D", "P", "L", "R", "F’, "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-46 in accordance with figure 1, UB suffix in accordance with figure 2 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/354. |
JAN2N2905AL-TransistorMIL-PRF-19500/290 | Single Bipolar Transistors | 3 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A and 2N2905AL transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/290. Provision for radiation hardness assurance (RHA) to eight radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device package outline for this specification sheet is similar to TO-39 for all encapsulated device types. |
JAN2N2906AUBC-TransistorPNP Silicon Switching -60V, -0.6A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JAN2N2907AP-Transistor-PINDPNP Silicon Switching -60V, -0.6A | Transistors | 1 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JAN2N2907AUBP-Transistor-PINDPNP Silicon Switching -60V, -0.6A | Bipolar (BJT) | 2 | Active | This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JAN2N2945AUB-TransistorMIL-PRF-19500/382 | Single Bipolar Transistors | 2 | Active | This specification covers the performance requirements for low-power, PNP, silicon 2N2944A, 2N2945A and 2N2946A transistors for use in high-speed, switching and general purpose amplifier applications. A 'M' and UB 'M' suffix will indicate a matched pair. Four levels of product assurance (JAN, JANTX, JANYXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/382, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for quality levels JANTX, JANS, JANHC, and JANKC. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: TO-206AB (similar to TO-46) and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/382. |
JAN2N3057A-TransistorMIL-PRF-19500/391 | Transistors | 3 | Active | This 2N3057A leaded silicon NPN transistor device is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-206AB (TO-46) package. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. |
JAN2N3419S-TransistorMIL-PRF-19500/393 | Transistors | 4 | Active | This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39) package, when S suffix and a low profile surfacemount U4 packages. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. |
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