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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
MSCDC150KK170D1PAG-Module1200V, 150A, D1P Dual Common Cathode mSiC™ Diode Module | Rectifiers | 4 | Active | * SiC Schottky Diode
* Zero reverse recovery
* Zero forward recovery
* Temperature Independent switching behavior
* Positive temperature coefficient on VF
* Low stray inductance
* High efficiency converter
* Outstanding performance at high frequency operation
* Stable temperature behavior
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
MSCDC200KK170D1PAG-Module1700V, 200A, D1P Dual Common Cathode mSiC™ Diode Module | Bridge Rectifiers | 8 | Active | * SiC Schottky Diode
* Zero reverse recovery
* Zero forward recovery
* Temperature Independent switching behavior
* Positive temperature coefficient on VF
* Low stray inductance
* High efficiency converter
* Outstanding performance at high frequency operation
* Stable temperature behavior
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
MSCDC450A170AG-Module1700V, 450A, SP6C Phase Leg mSiC™ Diode Module | Discrete Semiconductor Products | 1 | Active | * SiC Schottky Diode
* Zero reverse recovery
* Zero forward recovery
* Temperature Independent switching behavior
* Positive temperature coefficient on VF
* Low stray inductance
* High efficiency converter
* Outstanding performance at high frequency operation
* Stable temperature behavior
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
MSCDC50H1201AG-Module1700V, 50A, SP1F Three Phase Bridge mSiC™ Diode Module | Discrete Semiconductor Products | 4 | Active | * SiC Schottky Diode
* Zero reverse recovery
* Zero forward recovery
* Temperature Independent switching behavior
* Positive temperature coefficient on VF
* Low stray inductance
* High efficiency converter
* Outstanding performance at high frequency operation
* Stable temperature behavior
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
MSCDC600A170AG-Module1700V, 600A, SP6C Phase Leg mSiC™ Diode Module | Discrete Semiconductor Products | 2 | Active | * SiC Schottky Diode
* Zero reverse recovery
* Zero forward recovery
* Temperature Independent switching behavior
* Positive temperature coefficient on VF
* Low stray inductance
* High efficiency converter
* Outstanding performance at high frequency operation
* Stable temperature behavior
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
MSCGL40X120T3AG-Module1200V/Three Phase bridge/IGBT modules | Discrete Semiconductor Products | 1 | Active | * IGBT 4
* Very Low voltage drop
* Low tail current
* Low leakage current
* Kelvin emitter for easy drive
* Low stray inductance
* High level of integration
* Stable temperature behavior
* Very rugged
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* Internal thermistor for temperature monitoring (optional)
* Easy paralleling due to positive TC of VCEsat
* Low profile
* RoHS Compliant |
MSCGLQ100X065CTYZBNMG-Module650V, 100A, HPD, 3 Phase Bridge + Actuation Full-Options Trench 4 Fast + mSiC™ Diode Hybrid Module | Transistors | 1 | Active | • Configuration: 3-phase bridge + Solenoid Switch + Soft Start Switch + Regen (Brake)
• High speed IGBT 4 with // SiC Diodes
• Kelvin emitter for easy drive
• Very low stray inductance
• Ultra low weight and profile
• High efficiency converter
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant |
MSCGLQ50DDU120CTBL2NG-Module1200V, 50A, BL2, Double Dual Common Emitter Trench 4 Fast + mSiC™ Diode Baseplate-less Hybrid Module | Transistors | 7 | Active | '• High speed IGBT 4
• Kelvin emitter for easy drive
• Very low stray inductance
• Ultra low weight and profile
• High efficiency converter
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant |
MSCGLQ50X120CTYZBNMG-Module1200V, 50A, HPD, 3 phase bridge + Actuation full-options Trench 4 Fast + mSiC™ Diode Hybrid Module | IGBTs | 1 | Active | • Configuration: 3-phase bridge + Solenoid Switch + Soft Start Switch + Regen (Brake)
• High speed IGBT4 with // SiC diodes
- Low VCE(sat)
- High-temperature performance
• Kelvin emitter for easy drive
• Low stray inductance
• Internal thermistor for temperature monitoring
• High-efficiency converter
• Stable temperature behavior
• Direct mounting to the heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant |
MSCGTQ100HD65C1AG-Module650V/Vienna PFC/IGBT modules | Transistors | 1 | Active | * High speed IGBT 5
* Low voltage drop
* Low tail current
* Switching frequency up to 100 kHz
* Low leakage current
* Kelvin emitter for easy drive
* Low stray inductance
* Stable temperature behavior
* Very rugged
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* Internal thermistor for temperature monitoring (optional)
* Easy paralleling due to positive TC of VCEsat
* Low profile
* RoHS Compliant |