MSCDC50H1201AG-Module Series

1700V, 50A, SP1F Three Phase Bridge mSiC™ Diode Module

Catalog

1700V, 50A, SP1F Three Phase Bridge mSiC™ Diode Module

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Diode Type	Package / Case	Voltage - Peak Reverse (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology MSCDC50H701AG	50 A	1.8 V	Chassis Mount	Single Phase	Module	700 V	200 µA	Silicon Carbide Schottky	-40 C	175 °C
Microchip Technology MSCDC50X701AG	50 A	1.8 V	Chassis Mount	Three Phase	Module	700 V	200 µA	Silicon Carbide Schottky	-40 C	175 °C
Microchip Technology MSCDC50X1701AG	50 A	1.8 V	Chassis Mount	Three Phase	Module	1.7 kV	200 µA	Silicon Carbide Schottky	-40 C	175 °C
Microchip Technology MSCDC50H1201AG	50 A	1.8 V	Chassis Mount	Single Phase	Module	1.2 kV	200 µA	Silicon Carbide Schottky	-40 C	175 °C

Catalog

1700V, 50A, SP1F Three Phase Bridge mSiC™ Diode Module

Key Features

- Configuration: 3 Phase Bridge

- VRRM (V): 1700

- VF (V): 1.5

- Current (A) Tc=80C: 50

- Silicon Type: SiC Diode

- Package: SP1F

Description

* SiC Schottky Diode * Zero reverse recovery * Zero forward recovery * Temperature Independent switching behavior * Positive temperature coefficient on VF * Low stray inductance * High efficiency converter * Outstanding performance at high frequency operation * Stable temperature behavior * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant