MSCDC200KK170D1PAG-Module Series

1700V, 200A, D1P Dual Common Cathode mSiC™ Diode Module

Catalog

1700V, 200A, D1P Dual Common Cathode mSiC™ Diode Module

Part	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Voltage - Peak Reverse (Max) [Max]	Diode Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Speed	Reverse Recovery Time (trr)
Microchip Technology MSCDC200H120AG	800 µA	Silicon Carbide Schottky	SP6	1.2 kV	Single Phase	-40 C	175 °C	Chassis Mount	1.8 V	200 A	Module
Microchip Technology MSCDC200H170AG	800 µA	Silicon Carbide Schottky	SP6	1.7 kV	Single Phase	-40 C	175 °C	Chassis Mount	1.8 V	200 A	Module
Microchip Technology MSCDC200KK120D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1.2 kV	1 Pair Common Cathode	No Recovery Time	0 ns
Microchip Technology MSCDC200KK70D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	700 V	1 Pair Common Cathode	No Recovery Time	0 ns
Microchip Technology MSCDC200A170D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1700 V	1 Pair Series Connection	No Recovery Time	0 ns
Microchip Technology MSCDC200A70D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	700 V	1 Pair Series Connection	No Recovery Time	0 ns
Microchip Technology MSCDC200KK170D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1700 V	1 Pair Common Cathode	No Recovery Time	0 ns
Microchip Technology MSCDC200A120D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1.2 kV	1 Pair Series Connection	No Recovery Time	0 ns

Catalog

1700V, 200A, D1P Dual Common Cathode mSiC™ Diode Module

Key Features

- Configuration: Dual Common Cathode

- VRRM (V): 1700

- VF (V): 1.5

- Current (A) Tc=80C: 200

- Silicon type: SiC Diode

- Package: D1P

Description

* SiC Schottky Diode * Zero reverse recovery * Zero forward recovery * Temperature Independent switching behavior * Positive temperature coefficient on VF * Low stray inductance * High efficiency converter * Outstanding performance at high frequency operation * Stable temperature behavior * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant