L
LITTELFUSE
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 LITTELFUSE DRR-DTH-Q2167-2Obsolete | Switches | SWITCH REED CUSTOM |
LITTELFUSE DRR-DTH-70-85Obsolete | Switches | SWITCH REED SPDT 350MA 350V |
LITTELFUSE | Switches | ROCKER SWITCHES |
 LITTELFUSE | Switches | SWITCH PUSHBUTTON DPDT 6A 250V |
 LITTELFUSE 0HEV040.ZXPCBLObsolete | Circuit Protection | FUSE - HEV LC 425VDC 40A, PCB 3.9MM TERM/ BULK |
LITTELFUSE 0324015.HObsolete | Circuit Protection | FUSE CERM 15A 250VAC 125VDC 3AB |
 LITTELFUSE NANOSMD200LR-2Obsolete | Circuit Protection | PTC RESET FUSE 6V 2A 1206 |
LITTELFUSE | Connectors Interconnects | LINEAR IC'S |
 LITTELFUSE | Circuit Protection | TVS 1.5KW 36V 5%BI DO-214AB TR13 |
LITTELFUSE | Connectors Interconnects | LINEAR IC'S |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
LSIC2SD065D40CC"650V,2x20A SiC Diodes in TO-2632L" | Diodes | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
LSIC2SD065E20CCA650V/20A SiC SBD TO247-3LAEC-Q101 | Rectifiers | 1 | Obsolete | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
LSIC2SD065E40CCA650V/40A SiC SBD TO247-3LAEC-Q101 | Single Diodes | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
LSIC2SD1201200V/80A SiC SBD in SOT-227 | Rectifiers | 2 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
LSIC2SD120A20ASiC Schottky Diode 1200V 20A TO-220-2L | Diodes | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
| Single | 2 | Obsolete | ||
LSIC2SD120D10ASiC Schottky Diode 1200V 10A TO263-2L | Diodes | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
LSIC2SD120D20ASiC Schottky Diode 1200V 20A TO263-2L | Single Diodes | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
LSIC2SD120E30CCASiC Schottky Diode 1200V 2x15A TO247-3L | Diode Arrays | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
LSIC2SD120E40CCASiC Schottky Diode 1200V 2x20A TO247-3L | Discrete Semiconductor Products | 1 | Active | This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. |
