LSIC2SD065E20CCA Series

650V/20A SiC SBD TO247-3LAEC-Q101

Catalog

650V/20A SiC SBD TO247-3LAEC-Q101

Part	Speed	Grade	Technology	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Capacitance @ Vr, F
LITTELFUSE LSIC2SD065E20CCA	500 mA	Automotive	SiC (Silicon Carbide) Schottky	AEC-Q101	650 V	TO-247-3	1.8 V	0 ns	Through Hole	27 A	175 ░C	-55 °C	50 µA	TO-247AD	470 pF

Catalog

650V/20A SiC SBD TO247-3LAEC-Q101

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.