LSIC2SD120A20A Series

SiC Schottky Diode 1200V 20A TO-220-2L

Catalog

SiC Schottky Diode 1200V 20A TO-220-2L

Part	Technology	Speed	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
LITTELFUSE LSIC2SD120A20A	SiC (Silicon Carbide) Schottky	500 mA	54.5 A	0 ns	Through Hole	TO-220-2L	1.8 V	1.2 kV	TO-220-2	1142 pF	175 ░C	-55 °C	100 µA

Catalog

SiC Schottky Diode 1200V 20A TO-220-2L

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.