LSIC2SD120 Series

1200V/80A SiC SBD in SOT-227

Catalog

1200V/80A SiC SBD in SOT-227

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Speed	Technology
LITTELFUSE LSIC2SD120N80PA	0 ns	100 µA	1.8 V	40 A	175 ░C	-55 °C	SOT-227B - miniBLOC	Chassis Mount	SOT-227-4 miniBLOC	1.2 kV	75 A	2 Independent	500 mA	SiC (Silicon Carbide) Schottky
LITTELFUSE LSIC2SD120N40PA	0 ns	100 µA		1.8 V	175 ░C	-55 °C	SOT-227B - miniBLOC	Chassis Mount	SOT-227-4 miniBLOC	1.2 kV	42 A	2 Independent	500 mA	SiC (Silicon Carbide) Schottky

Catalog

1200V/80A SiC SBD in SOT-227

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.