Product families from Cambridge GaN Devices
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
Parts that are not part of a series
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Parts from Cambridge GaN Devices that are not part of a series
| Part Information | Pricing (lowest) | Vgs(th) (Max) | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Mounting Type | Vgs (Max) Negative | Vgs (Max) Positive | FET Feature | Package / Case | Package Name | Package Length | Package Width | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Max) | Technology | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() Cambridge GaN Devices ICEGAN 25MR BHDFN HALF BRIDGE EV | Sign in to see pricing | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
![]() Cambridge GaN Devices ICEGAN 55MR BHDFN HALF BRIDGE EV | Sign in to see pricing | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
![]() Cambridge GaN Devices ICEGAN 240M HALF BRIDGE - EVALUA | Sign in to see pricing | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
![]() Cambridge GaN Devices ICEGAN 130M HALF BRIDGE WITH H2 | Sign in to see pricing | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
![]() Cambridge GaN Devices ICEGAN 130M HALF BRIDGE WITH H2 | Sign in to see pricing | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
![]() Cambridge GaN Devices 650V GAN HEMT, 55MOHM, DFN8X8. W | Sign in to see pricing | 4.2 V | 77 mOhm | -55 °C | 150 °C | 27 A | Surface Mount | -1 V | 20 V | Current Sensing | 16-PowerVDFN | 16-DFN | 8 mm | 8 mm | 12 V | 6 nC | GaNFET (Gallium Nitride) | 650 V | — | — | — | — |
![]() Cambridge GaN Devices 650V GAN HEMT, 55MOHM, DFN8X8. W | Sign in to see pricing | 4.2 V | 77 mOhm | -55 °C | 150 °C | — | Surface Mount | -1 V | 20 V | — | 16-PowerVDFN | 16-DFN | 8 mm | 8 mm | 12 V | 4 nC | GaNFET (Gallium Nitride) | 650 V | N-Channel | 27 A | — | — |
![]() Cambridge GaN Devices 650V GAN HEMT, 130MOHM, DFN8X8. | Sign in to see pricing | 4.2 V | 182 mOhm | -55 °C | 150 °C | 12 A | Surface Mount | -1 V | 20 V | Current Sensing | 16-PowerVDFN | 16-DFN | 8 mm | 8 mm | 12 V | 2.3 nC | GaNFET (Gallium Nitride) | 650 V | — | — | — | — |
![]() Cambridge GaN Devices 650V GAN HEMT, 130MOHM, DFN8X8. | Sign in to see pricing | 4.2 V | 182 mOhm | -55 °C | 150 °C | — | Surface Mount | -1 V | 20 V | — | 16-PowerVDFN | 16-DFN | 8 mm | 8 mm | 12 V | 1.9 nC | GaNFET (Gallium Nitride) | 650 V | N-Channel | 12 A | — | — |
![]() Cambridge GaN Devices 650V GAN HEMT, 130MOHM, DFN5X6. | Sign in to see pricing | 4.2 V | 182 mOhm | -55 °C | 150 °C | 12 A | Surface Mount | -1 V | 20 V | Current Sensing | 8-PowerVDFN | 8-DFN | 5 mm | 6 mm | — | 2.3 nC | GaNFET (Gallium Nitride) | 650 V | — | — | 9 V | 20 V |