Discrete Semiconductor Products
CGD65A055SH2
ActiveCambridge GaN Devices
650V GAN HEMT, 55MOHM, DFN8X8. W
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Discrete Semiconductor Products
CGD65A055SH2
ActiveCambridge GaN Devices
650V GAN HEMT, 55MOHM, DFN8X8. W
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CGD65A055SH2 |
|---|---|
| Current - Continuous Drain (Id) | 27 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 4 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 16-PowerVDFN |
| Package Length | 8 mm |
| Package Name | 16-DFN |
| Package Width | 8 mm |
| Rds On (Max) | 77 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -1 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 3105 | $ 12.60 | 1m+ |
CAD
3D models and CAD resources for this part
Description
General part information
CGD65A055SH2
650V GAN HEMT, 55MOHM, DFN8X8. W
Documents
Technical documentation and resources
No documents available