Discrete Semiconductor Products
CGD65A130SH2
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN8X8.
Discrete Semiconductor Products
CGD65A130SH2
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN8X8.
Technical Specifications
Parameters and characteristics for this part
| Specification | CGD65A130SH2 |
|---|---|
| Current - Continuous Drain (Id) | 12 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.9 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 16-PowerVDFN |
| Package Length | 8 mm |
| Package Name | 16-DFN |
| Package Width | 8 mm |
| Rds On (Max) | 182 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -1 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 7.55 | <4d |
| 10 | $ 5.12 | |||
| 100 | $ 3.89 | |||
| Tape & Reel (TR) | 3500 | $ 3.17 | <4d | |
CAD
3D models and CAD resources for this part
Description
General part information
CGD65A130SH2
650V GAN HEMT, 130MOHM, DFN8X8.
Documents
Technical documentation and resources