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CGD65A130S2-T13
Discrete Semiconductor Products

CGD65A130S2-T13

Active
Cambridge GaN Devices

650V GAN HEMT, 130MOHM, DFN8X8.

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CGD65A130S2-T13
Discrete Semiconductor Products

CGD65A130S2-T13

Active
Cambridge GaN Devices

650V GAN HEMT, 130MOHM, DFN8X8.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCGD65A130S2-T13
Current - Continuous Drain (Id) (Tc)12 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)12 V
FET FeatureCurrent Sensing
Gate Charge (Max)2.3 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case16-PowerVDFN
Package Length8 mm
Package Name16-DFN
Package Width8 mm
Rds On (Max)182 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Negative-1 V
Vgs (Max) Positive20 V
Vgs(th) (Max)4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 6.251m+
10$ 5.36
100$ 4.46
500$ 3.94
1000$ 3.55
Digi-Reel® 1$ 6.251m+
10$ 5.36
100$ 4.46
500$ 3.94
1000$ 3.55
N/A 3306$ 7.681m+
Tape & Reel (TR) 3500$ 3.321m+

CAD

3D models and CAD resources for this part

Description

General part information

CGD65A130S2-T13

650 V 12A (Tc) Surface Mount 16-DFN (8x8)

Documents

Technical documentation and resources

No documents available