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CGD65A055S2-T07
Discrete Semiconductor Products

CGD65A055S2-T07

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Cambridge GaN Devices

650V GAN HEMT, 55MOHM, DFN8X8. W

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CGD65A055S2-T07
Discrete Semiconductor Products

CGD65A055S2-T07

Active
Cambridge GaN Devices

650V GAN HEMT, 55MOHM, DFN8X8. W

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationCGD65A055S2-T07
Current - Continuous Drain (Id) (Tc)27 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)12 V
FET FeatureCurrent Sensing
Gate Charge (Max)6 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case16-PowerVDFN
Package Length8 mm
Package Name16-DFN
Package Width8 mm
Rds On (Max)77 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Negative-1 V
Vgs (Max) Positive20 V
Vgs(th) (Max)4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 15.061m+
10$ 13.27
100$ 11.47
500$ 10.40
Digi-Reel® 1$ 15.061m+
10$ 13.27
100$ 11.47
500$ 10.40
N/A 646$ 16.571m+
Tape & Reel (TR) 1000$ 9.541m+

CAD

3D models and CAD resources for this part

Description

General part information

CGD65A055S2-T07

650 V 27A (Tc) Surface Mount 16-DFN (8x8)

Documents

Technical documentation and resources