Discrete Semiconductor Products
CGD65B130S2-T13
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
Discrete Semiconductor Products
CGD65B130S2-T13
ActiveCambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | CGD65B130S2-T13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 9 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Feature | Current Sensing |
| Gate Charge (Max) | 2.3 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-DFN |
| Package Width | 6 mm |
| Rds On (Max) | 182 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -1 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.42 | 1m+ |
| 10 | $ 5.39 | |||
| 100 | $ 4.36 | |||
| 500 | $ 3.88 | |||
| 1000 | $ 3.32 | |||
| 2000 | $ 3.13 | |||
| Digi-Reel® | 1 | $ 6.42 | 1m+ | |
| 10 | $ 5.39 | |||
| 100 | $ 4.36 | |||
| 500 | $ 3.88 | |||
| 1000 | $ 3.32 | |||
| 2000 | $ 3.13 | |||
| N/A | 4851 | $ 7.23 | 1m+ | |
| Tape & Reel (TR) | 5000 | $ 3.00 | 1m+ | |
CAD
3D models and CAD resources for this part
Description
General part information
CGD65B130S2-T13
650 V 12A (Tc) Surface Mount 8-DFN (5x6)
Documents
Technical documentation and resources