
Catalog
3-ch, 3-input, 2-V to 5.5-V NAND gates
Key Features
• VCCoperation of 2 V to 5.5 VMax tpdof 7 ns at 5 VTypical VOLP(Output Ground Bounce) <0.8 V at VCC= 3.3 V, TA= 25°CTypical VOHV(Output VOHUndershoot) >2.3 V at VCC= 3.3 V, TA = 25°CIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIVCCoperation of 2 V to 5.5 VMax tpdof 7 ns at 5 VTypical VOLP(Output Ground Bounce) <0.8 V at VCC= 3.3 V, TA= 25°CTypical VOHV(Output VOHUndershoot) >2.3 V at VCC= 3.3 V, TA = 25°CIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class II
Description
AI
These triple 3-input positive-NAND gates are designed for 2 V to 5.5 V VCCoperation. The SN74LV10A devices perform the Boolean function Y =A • B • Cin positive logic. These devices are fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down.
These triple 3-input positive-NAND gates are designed for 2 V to 5.5 V VCCoperation. The SN74LV10A devices perform the Boolean function Y =A • B • Cin positive logic. These devices are fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down.