Specification	MSCSM120AM027CT6AG

Configuration	2 N Channel
Current - Continuous Drain (Id) @ 25°C	733 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	2088 nC
Input Capacitance (Ciss) (Max) @ Vds	27000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	2.97 kW
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	SP6C
Technology	Silicon Carbide (SiC)

MSCSM120DDUM16CTBL3NG-Module Series

1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Configuration	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Vgs(th) (Max) @ Id	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Microchip Technology MSCSM120AM027CT6AG	-40 C	175 °C	SP6C	733 A	2 N Channel	Module	Chassis Mount	27000 pF	3.5 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	2.97 kW	2088 nC
Microchip Technology MSCSM120AM11T3AG	-40 C	175 °C		254 A	2 N Channel	Module	Chassis Mount	9060 pF	10.4 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)		696 nC	1.067 kW
Microchip Technology MSCSM120DDUM16TBL3NG	-55 °C	175 ░C		150 A	4 N-Channel Common Source	Module	Chassis Mount	6040 pF		1200 V	1.2 kV	Silicon Carbide (SiC)	560 W	464 nC		2.8 V
Microchip Technology MSCSM120DUM31TBL1NG	-55 °C	175 ░C		79 A	2 N-Channel (Dual) Common Source	Module	Chassis Mount	3020 pF	31 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	310 W	232 nC		2.8 V
Microchip Technology MSCSM120AM027D3AG	-40 C	175 °C		733 A	2 N Channel	Module	Chassis Mount	27000 pF	3.5 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	2.97 kW	2088 nC		2.8 V
Microchip Technology MSCSM120DHM31CTBL2NG	-55 °C	175 ░C		79 A	2 N-Channel (Dual) Asymmetrical	Module	Chassis Mount	3020 pF	31 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	310 W	232 nC			2.8 V
Microchip Technology MSCSM120AM02CT6LIAG	-40 C	175 °C	SP6C LI	947 A	2 N Channel	Module	Chassis Mount	36240 pF	2.6 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	3.75 kW	2784 nC		2.8 V
Microchip Technology MSCSM120AM31CTBL1NG	-55 °C	175 ░C		79 A	2 N Channel	Module	Chassis Mount	3020 pF	31 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	310 W	232 nC			2.8 V
Microchip Technology MSCSM120AM042D3AG	-40 C	175 °C		495 A	2 N Channel	Module	Chassis Mount	18100 pF	5.2 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	2.031 kW			2.8 V		1392 nC
Microchip Technology MSCSM120AM03CT6LIAG	-40 C	175 °C	SP6C LI	805 A	2 N Channel	Module	Chassis Mount	30200 pF	3.1 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)			3.215 kW	2.8 V		2320 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1195.47
Microchip Direct	N/A	1	$ 1195.47
		50	$ 990.52
		100	$ 888.06
		250	$ 853.90
		500	$ 751.43
		1000	$ 683.12
		5000	$ 601.14
Newark	Each	1	$ 1195.46
		5	$ 819.74
		50	$ 792.42
		100	$ 765.09
		250	$ 765.09
		500	$ 765.09

Description

General part information

MSCSM120DDUM16CTBL3NG-Module Series

• SiC Power MOSFET

- Low RDS(on)

- High-temperature performance

Documents

Technical documentation and resources

MSCSM120AM027CT6AG

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MSCSM120AM027CT6AG

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Technical Specifications

MSCSM120DDUM16CTBL3NG-Module Series

Pricing

Description

MSCSM120DDUM16CTBL3NG-Module Series

Documents

Product Change Notice EN

Handling Instructions & Protection Against Electrostatic Discharges

MSCSM120AM027CT6AG 1200V Phase Leg SiC MOSFET Module Datasheet

35 kW Active Rectifier with Integrated PM

High Frequency Resonant Half Bridge

MSCSM120DDUM16CTBL3NG-Module Series