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Discrete Semiconductor Products
MSCSM120DUM31TBL1NG
ActiveMicrochip Technology
1200V, 25 MOHM, BL1, DUAL COMMON SOURCE BASEPLATE-LESS MSIC™ MOSFET MODULE
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Discrete Semiconductor Products
MSCSM120DUM31TBL1NG
ActiveMicrochip Technology
1200V, 25 MOHM, BL1, DUAL COMMON SOURCE BASEPLATE-LESS MSIC™ MOSFET MODULE
Technical Specifications
Parameters and characteristics for this part
| Specification | MSCSM120DUM31TBL1NG |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Source |
| Current - Continuous Drain (Id) @ 25°C | 79 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Module |
| Power - Max [Max] | 310 W |
| Rds On (Max) @ Id, Vgs | 31 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 140.45 | |
| Microchip Direct | N/A | 1 | $ 140.45 | |
| 50 | $ 116.38 | |||
| 100 | $ 104.33 | |||
| 250 | $ 100.32 | |||
| 500 | $ 88.29 | |||
| 1000 | $ 80.26 | |||
| 5000 | $ 70.63 | |||
| Newark | Each | 5 | $ 96.31 | |
| 50 | $ 93.10 | |||
| 100 | $ 89.89 | |||
| 250 | $ 89.89 | |||
| 500 | $ 89.89 | |||
Description
General part information
MSCSM120DDUM16CTBL3NG-Module Series
• SiC Power MOSFET
- Low RDS(on)
- High-temperature performance
Documents
Technical documentation and resources
