MSCSM120DDUM16CTBL3NG-Module Series

1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module

Catalog

1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Configuration	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Vgs(th) (Max) @ Id	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Microchip Technology MSCSM120AM027CT6AG	-40 C	175 °C	SP6C	733 A	2 N Channel	Module	Chassis Mount	27000 pF	3.5 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	2.97 kW	2088 nC
Microchip Technology MSCSM120AM11T3AG	-40 C	175 °C		254 A	2 N Channel	Module	Chassis Mount	9060 pF	10.4 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)		696 nC	1.067 kW
Microchip Technology MSCSM120DDUM16TBL3NG	-55 °C	175 ░C		150 A	4 N-Channel Common Source	Module	Chassis Mount	6040 pF		1200 V	1.2 kV	Silicon Carbide (SiC)	560 W	464 nC		2.8 V
Microchip Technology MSCSM120DUM31TBL1NG	-55 °C	175 ░C		79 A	2 N-Channel (Dual) Common Source	Module	Chassis Mount	3020 pF	31 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	310 W	232 nC		2.8 V
Microchip Technology MSCSM120AM027D3AG	-40 C	175 °C		733 A	2 N Channel	Module	Chassis Mount	27000 pF	3.5 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	2.97 kW	2088 nC		2.8 V
Microchip Technology MSCSM120DHM31CTBL2NG	-55 °C	175 ░C		79 A	2 N-Channel (Dual) Asymmetrical	Module	Chassis Mount	3020 pF	31 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	310 W	232 nC			2.8 V
Microchip Technology MSCSM120AM02CT6LIAG	-40 C	175 °C	SP6C LI	947 A	2 N Channel	Module	Chassis Mount	36240 pF	2.6 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	3.75 kW	2784 nC		2.8 V
Microchip Technology MSCSM120AM31CTBL1NG	-55 °C	175 ░C		79 A	2 N Channel	Module	Chassis Mount	3020 pF	31 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	310 W	232 nC			2.8 V
Microchip Technology MSCSM120AM042D3AG	-40 C	175 °C		495 A	2 N Channel	Module	Chassis Mount	18100 pF	5.2 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	2.031 kW			2.8 V		1392 nC
Microchip Technology MSCSM120AM03CT6LIAG	-40 C	175 °C	SP6C LI	805 A	2 N Channel	Module	Chassis Mount	30200 pF	3.1 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)			3.215 kW	2.8 V		2320 nC

Key Features

- • Configuration: Double dual common source

- • VDSS (V): 1200

- • RDSon (mR) typ: 12.5

- • Current (A) Tc=80°C: 120

- • Silicon type: SiC MOSFET

- • Package type: BL3

Description

• SiC Power MOSFET - Low RDS(on) - High-temperature performance • Kelvin source for easy drive • Low stray inductance • Internal thermistor for temperature monitoring (optional) • High-efficiency converter • Outstanding performance at high-frequency operation • Stable temperature behavior • Direct mounting to the heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant