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Discrete Semiconductor Products
MSCSM120AM027D3AG
ActiveMicrochip Technology
1200V, 2.8 MOHM, D3, PHASE LEG MSIC™ MOSFET MODULE
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Discrete Semiconductor Products
MSCSM120AM027D3AG
ActiveMicrochip Technology
1200V, 2.8 MOHM, D3, PHASE LEG MSIC™ MOSFET MODULE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MSCSM120AM027D3AG |
|---|---|
| Configuration | 2 N Channel |
| Current - Continuous Drain (Id) @ 25°C | 733 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 2088 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 27000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 2.97 kW |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 2.8 V |
MSCSM120DDUM16CTBL3NG-Module Series
1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Configuration | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Technology | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Power - Max | Vgs(th) (Max) @ Id | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | -40 C | 175 °C | SP6C | 733 A | 2 N Channel | Module | Chassis Mount | 27000 pF | 3.5 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 2.97 kW | 2088 nC | ||||
Microchip Technology | -40 C | 175 °C | 254 A | 2 N Channel | Module | Chassis Mount | 9060 pF | 10.4 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 696 nC | 1.067 kW | |||||
Microchip Technology | -55 °C | 175 ░C | 150 A | 4 N-Channel Common Source | Module | Chassis Mount | 6040 pF | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 560 W | 464 nC | 2.8 V | |||||
Microchip Technology | -55 °C | 175 ░C | 79 A | 2 N-Channel (Dual) Common Source | Module | Chassis Mount | 3020 pF | 31 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 310 W | 232 nC | 2.8 V | ||||
Microchip Technology | -40 C | 175 °C | 733 A | 2 N Channel | Module | Chassis Mount | 27000 pF | 3.5 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 2.97 kW | 2088 nC | 2.8 V | ||||
Microchip Technology | -55 °C | 175 ░C | 79 A | 2 N-Channel (Dual) Asymmetrical | Module | Chassis Mount | 3020 pF | 31 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 310 W | 232 nC | 2.8 V | ||||
 Microchip Technology | -40 C | 175 °C | SP6C LI | 947 A | 2 N Channel | Module | Chassis Mount | 36240 pF | 2.6 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 3.75 kW | 2784 nC | 2.8 V | |||
Microchip Technology | -55 °C | 175 ░C | 79 A | 2 N Channel | Module | Chassis Mount | 3020 pF | 31 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 310 W | 232 nC | 2.8 V | ||||
Microchip Technology | -40 C | 175 °C | 495 A | 2 N Channel | Module | Chassis Mount | 18100 pF | 5.2 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 2.031 kW | 2.8 V | 1392 nC | ||||
 Microchip Technology | -40 C | 175 °C | SP6C LI | 805 A | 2 N Channel | Module | Chassis Mount | 30200 pF | 3.1 mOhm | 1200 V | 1.2 kV | Silicon Carbide (SiC) | 3.215 kW | 2.8 V | 2320 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1004.69 | |
| Microchip Direct | N/A | 1 | $ 1004.69 | |
| 50 | $ 841.77 | |||
| 100 | $ 760.31 | |||
| 250 | $ 678.85 | |||
| 500 | $ 597.39 | |||
| 1000 | $ 543.08 | |||
| 5000 | $ 499.63 | |||
| Newark | Each | 1 | $ 1004.70 | |
| 5 | $ 651.70 | |||
| 50 | $ 629.97 | |||
| 100 | $ 608.25 | |||
| 250 | $ 608.25 | |||
| 500 | $ 608.25 | |||
Description
General part information
MSCSM120DDUM16CTBL3NG-Module Series
• SiC Power MOSFET
- Low RDS(on)
- High-temperature performance
Documents
Technical documentation and resources