Discrete Semiconductor Products

STGW30M65DF2

Active

STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +10

Discrete Semiconductor Products

STGW30M65DF2

Active

STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +10

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW30M65DF2

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	80 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	258 W
Reverse Recovery Time (trr)	140 ns
Supplier Device Package	TO-247-3
Switching Energy	300 µJ, 960 µJ
Td (on/off) @ 25°C [custom]	115 ns
Td (on/off) @ 25°C [custom]	31.6 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

STGW30 Series

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

Part	IGBT Type	Switching Energy	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Test Condition	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
STMicroelectronics STGW30V60F	Trench Field Stop	233 µJ 383 µJ	TO-247-3	175 °C	-55 °C	2.3 V	60 A	45 ns 189 ns	120 A	Through Hole	260 W	600 V	TO-247	163 nC	10 Ohm 15 V 30 A 400 V
STMicroelectronics STGW30V60DF	Trench Field Stop	233 µJ 383 µJ	TO-247-3	175 °C	-55 °C	2.3 V	60 A	45 ns 189 ns	120 A	Through Hole	258 W	600 V	TO-247-3	163 nC	10 Ohm 15 V 30 A 400 V	53 ns
STMicroelectronics STGW30NC60W		181 µJ 305 µJ	TO-247-3	150 °C	-55 °C	2.5 V	60 A		150 A	Through Hole	200 W	600 V	TO-247-3	102 nC	10 Ohm 15 V 20 A 390 V		29.5ns/118ns
STMicroelectronics STGW30H60DF	Trench Field Stop	350 µJ 400 µJ	TO-247-3	175 °C	-40 °C	2.4 V	60 A		120 A	Through Hole	260 W	600 V	TO-247	105 nC	10 Ohm 15 V 30 A 400 V	110 ns		50 ns	160 ns
STMicroelectronics STGW30H60DLFB	Trench Field Stop	293 µJ	TO-247-3	175 °C	-55 °C	2 V	60 A	146 ns	120 A	Through Hole	260 W	600 V	TO-247-3	149 nC	10 Ohm 15 V 30 A 400 V		-
STMicroelectronics STGW30N120KD		2.4 mJ 4.3 mJ	TO-247-3	125 °C	-55 ░C	3.85 V	60 A		100 A	Through Hole	220 W	1200 V	TO-247-3	105 nC	10 Ohm 15 V 20 A 960 V	84 ns
STMicroelectronics STGW30NC60WD		181 µJ 305 µJ	TO-247-3	150 °C	-55 °C	2.5 V	60 A		150 A	Through Hole	200 W	600 V	TO-247-3	102 nC	10 Ohm 15 V 20 A 390 V	40 ns	29.5ns/118ns
STMicroelectronics STGW30H60DFB	Trench Field Stop	293 µJ 383 µJ	TO-247-3	175 °C	-55 °C	2 V	60 A		120 A	Through Hole	260 W	600 V	TO-247	149 nC	10 Ohm 15 V 30 A 400 V	53 ns		37 ns	146 ns
STMicroelectronics STGW30M65DF2	Trench Field Stop	300 µJ 960 µJ	TO-247-3	175 °C	-55 °C	2 V	60 A		120 A	Through Hole	258 W	650 V	TO-247-3	80 nC	10 Ohm 15 V 30 A 400 V	140 ns		31.6 ns	115 ns
STMicroelectronics STGW30N90D		1.66 mJ 4.44 mJ	TO-247-3	150 °C	-55 °C	2.75 V	60 A		135 A	Through Hole	220 W	900 V	TO-247-3	110 nC	10 Ohm 15 V 20 A 900 V	152 ns		29 ns	275 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	598	$ 2.63
	Tube	1	$ 2.23
		30	$ 1.77
		120	$ 1.52
		510	$ 1.48
Mouser	N/A	1	$ 4.20
		25	$ 2.31
		100	$ 1.89
		250	$ 1.59
		600	$ 1.48
		1200	$ 1.45
		3000	$ 1.39

Description

General part information

STGW30 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet

Technical Data Sheet EN

Datasheet

Flyers

Flyers

TN1225

Technical Notes & Articles

TN1224

Technical Notes & Articles

STGW30M65DF2

Deep-Dive with AI

STGW30M65DF2

Deep-Dive with AI

Technical Specifications

STGW30 Series

Pricing

Description

STGW30 Series

Documents

Datasheet

Product Change Notice EN

Technical Data Sheet EN

Datasheet

Flyers

Flyers

AN4544

TN1378

AN4694

Flyers

TN1225

TN1224

STGW30 Series