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TO-247-3 HiP
Discrete Semiconductor Products

STGW30M65DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS

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Search across all available documentation for this part.

DocumentsDatasheetTechnical Data Sheet EN+10
TO-247-3 HiP
Discrete Semiconductor Products

STGW30M65DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS

Deep-Dive with AI

DocumentsDatasheetTechnical Data Sheet EN+10

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW30M65DF2
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge80 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]258 W
Reverse Recovery Time (trr)140 ns
Supplier Device PackageTO-247-3
Switching Energy300 µJ, 960 µJ
Td (on/off) @ 25°C115 ns
Td (on/off) @ 25°C31.6 ns
Test Condition15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max)650 V

STGW30M65DF2 Series

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

PartGate ChargePower - Max [Max]IGBT TypeSupplier Device PackageOperating Temperature [Min]Operating Temperature [Max]Current - Collector Pulsed (Icm)Switching EnergyMounting TypeTd (on/off) @ 25°CCurrent - Collector (Ic) (Max) [Max]Package / CaseVoltage - Collector Emitter Breakdown (Max) [Max]Vce(on) (Max) @ Vge, IcTest ConditionReverse Recovery Time (trr)Td (on/off) @ 25°CTd (on/off) @ 25°CTd (on/off) @ 25°CSwitching Energy [custom]Switching Energy [custom]Voltage - Collector Emitter Breakdown (Max)Vce(on) (Max) @ Vge, Ic [Max]
TO-247-3 HiP
STMicroelectronics
STGW30V60F
163 nC
260 W
Trench Field Stop
TO-247
-55 °C
175 ░C
120 A
233 µJ
383 µJ
Through Hole
45 ns
189 ns
60 A
TO-247-3
600 V
2.3 V
10 Ohm
15 V
30 A
400 V
TO-247-3 HiP
STMicroelectronics
STGW30V60DF
163 nC
258 W
Trench Field Stop
TO-247-3
-55 °C
175 ░C
120 A
233 µJ
383 µJ
Through Hole
45 ns
189 ns
60 A
TO-247-3
600 V
2.3 V
10 Ohm
15 V
30 A
400 V
53 ns
TO-247-3 HiP
STMicroelectronics
STGW30NC60W
102 nC
200 W
TO-247-3
-55 °C
150 °C
150 A
181 µJ
305 µJ
Through Hole
60 A
TO-247-3
600 V
2.5 V
10 Ohm
15 V
20 A
390 V
118 ns
29.5 ns
TO-247-3 HiP
STMicroelectronics
STGW30H60DLFB
149 nC
260 W
Trench Field Stop
TO-247-3
-55 °C
175 ░C
120 A
293 µJ
Through Hole
60 A
TO-247-3
600 V
2 V
10 Ohm
15 V
30 A
400 V
-/146ns
TO-247-3 HiP
STMicroelectronics
STGW30N120KD
105 nC
220 W
TO-247-3
-55 °C
125 ¯C
100 A
2.4 mJ
4.3 mJ
Through Hole
60 A
TO-247-3
1200 V
3.85 V
10 Ohm
15 V
20 A
960 V
84 ns
TO-247-3 HiP
STMicroelectronics
STGW30NC60WD
102 nC
200 W
TO-247-3
-55 °C
150 °C
150 A
181 µJ
305 µJ
Through Hole
60 A
TO-247-3
600 V
2.5 V
10 Ohm
15 V
20 A
390 V
40 ns
118 ns
29.5 ns
STMICROELECTRONICS STW21N90K5
STMicroelectronics
STGW30H60DFB
149 nC
260 W
Trench Field Stop
TO-247
-55 °C
175 ░C
120 A
Through Hole
60 A
TO-247-3
600 V
2 V
10 Ohm
15 V
30 A
400 V
53 ns
37 ns
146 ns
383 µJ
293 µJ
TO-247-3 HiP
STMicroelectronics
STGW30M65DF2
80 nC
258 W
Trench Field Stop
TO-247-3
-55 °C
175 ░C
120 A
300 µJ
960 µJ
Through Hole
60 A
TO-247-3
2 V
10 Ohm
15 V
30 A
400 V
140 ns
115 ns
31.6 ns
650 V
TO-247-3 HiP
STMicroelectronics
STGW30N90D
110 nC
220 W
TO-247-3
-55 °C
150 °C
135 A
1.66 mJ
4.44 mJ
Through Hole
60 A
TO-247-3
10 Ohm
15 V
20 A
900 V
152 ns
275 ns
29 ns
900 V
2.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.23
30$ 1.77
120$ 1.52
510$ 1.48

Description

General part information

STGW30M65DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.