Discrete Semiconductor Products

STGW30N90D

Obsolete

STMicroelectronics

IGBT 900V 60A 220W TO247

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Search across all available documentation for this part.

Discrete Semiconductor Products

STGW30N90D

Obsolete

STMicroelectronics

IGBT 900V 60A 220W TO247

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW30N90D

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	135 A
Gate Charge	110 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	220 W
Reverse Recovery Time (trr)	152 ns
Supplier Device Package	TO-247-3
Switching Energy	4.44 mJ, 1.66 mJ
Td (on/off) @ 25°C [custom]	275 ns
Td (on/off) @ 25°C [custom]	29 ns
Test Condition	15 V, 900 V, 10 Ohm, 20 A
Vce(on) (Max) @ Vge, Ic	2.75 V
Voltage - Collector Emitter Breakdown (Max) [Max]	900 V

STGW30 Series

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

Part	IGBT Type	Switching Energy	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Test Condition	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
STMicroelectronics STGW30V60F	Trench Field Stop	233 µJ 383 µJ	TO-247-3	175 °C	-55 °C	2.3 V	60 A	45 ns 189 ns	120 A	Through Hole	260 W	600 V	TO-247	163 nC	10 Ohm 15 V 30 A 400 V
STMicroelectronics STGW30V60DF	Trench Field Stop	233 µJ 383 µJ	TO-247-3	175 °C	-55 °C	2.3 V	60 A	45 ns 189 ns	120 A	Through Hole	258 W	600 V	TO-247-3	163 nC	10 Ohm 15 V 30 A 400 V	53 ns
STMicroelectronics STGW30NC60W		181 µJ 305 µJ	TO-247-3	150 °C	-55 °C	2.5 V	60 A		150 A	Through Hole	200 W	600 V	TO-247-3	102 nC	10 Ohm 15 V 20 A 390 V		29.5ns/118ns
STMicroelectronics STGW30H60DF	Trench Field Stop	350 µJ 400 µJ	TO-247-3	175 °C	-40 °C	2.4 V	60 A		120 A	Through Hole	260 W	600 V	TO-247	105 nC	10 Ohm 15 V 30 A 400 V	110 ns		50 ns	160 ns
STMicroelectronics STGW30H60DLFB	Trench Field Stop	293 µJ	TO-247-3	175 °C	-55 °C	2 V	60 A	146 ns	120 A	Through Hole	260 W	600 V	TO-247-3	149 nC	10 Ohm 15 V 30 A 400 V		-
STMicroelectronics STGW30N120KD		2.4 mJ 4.3 mJ	TO-247-3	125 °C	-55 ░C	3.85 V	60 A		100 A	Through Hole	220 W	1200 V	TO-247-3	105 nC	10 Ohm 15 V 20 A 960 V	84 ns
STMicroelectronics STGW30NC60WD		181 µJ 305 µJ	TO-247-3	150 °C	-55 °C	2.5 V	60 A		150 A	Through Hole	200 W	600 V	TO-247-3	102 nC	10 Ohm 15 V 20 A 390 V	40 ns	29.5ns/118ns
STMicroelectronics STGW30H60DFB	Trench Field Stop	293 µJ 383 µJ	TO-247-3	175 °C	-55 °C	2 V	60 A		120 A	Through Hole	260 W	600 V	TO-247	149 nC	10 Ohm 15 V 30 A 400 V	53 ns		37 ns	146 ns
STMicroelectronics STGW30M65DF2	Trench Field Stop	300 µJ 960 µJ	TO-247-3	175 °C	-55 °C	2 V	60 A		120 A	Through Hole	258 W	650 V	TO-247-3	80 nC	10 Ohm 15 V 30 A 400 V	140 ns		31.6 ns	115 ns
STMicroelectronics STGW30N90D		1.66 mJ 4.44 mJ	TO-247-3	150 °C	-55 °C	2.75 V	60 A		135 A	Through Hole	220 W	900 V	TO-247-3	110 nC	10 Ohm 15 V 20 A 900 V	152 ns		29 ns	275 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.07

Description

General part information

STGW30 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources

No documents available