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TO-247-3 HiP
Discrete Semiconductor Products

STGW30H60DFB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

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TO-247-3 HiP
Discrete Semiconductor Products

STGW30H60DFB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

Deep-Dive with AI

DocumentsDatasheet+12

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW30H60DFB
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge149 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]260 W
Reverse Recovery Time (trr)53 ns
Supplier Device PackageTO-247
Switching Energy383 µJ, 293 µJ
Td (on/off) @ 25°C [custom]37 ns
Td (on/off) @ 25°C [custom]146 ns
Test Condition30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

STGW30 Series

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

PartIGBT TypeSwitching EnergyPackage / CaseOperating Temperature [Max]Operating Temperature [Min]Vce(on) (Max) @ Vge, IcCurrent - Collector (Ic) (Max) [Max]Td (on/off) @ 25°CCurrent - Collector Pulsed (Icm)Mounting TypePower - Max [Max]Voltage - Collector Emitter Breakdown (Max) [Max]Supplier Device PackageGate ChargeTest ConditionReverse Recovery Time (trr)Td (on/off) @ 25°CTd (on/off) @ 25°C [custom]Td (on/off) @ 25°C [custom]
TO-247-3 HiP
STMicroelectronics
STGW30V60F
Trench Field Stop
233 µJ
383 µJ
TO-247-3
175 °C
-55 °C
2.3 V
60 A
45 ns
189 ns
120 A
Through Hole
260 W
600 V
TO-247
163 nC
10 Ohm
15 V
30 A
400 V
STMICROELECTRONICS STW21N90K5
STMicroelectronics
STGW30V60DF
Trench Field Stop
233 µJ
383 µJ
TO-247-3
175 °C
-55 °C
2.3 V
60 A
45 ns
189 ns
120 A
Through Hole
258 W
600 V
TO-247-3
163 nC
10 Ohm
15 V
30 A
400 V
53 ns
TO-247-3 HiP
STMicroelectronics
STGW30NC60W
181 µJ
305 µJ
TO-247-3
150 °C
-55 °C
2.5 V
60 A
150 A
Through Hole
200 W
600 V
TO-247-3
102 nC
10 Ohm
15 V
20 A
390 V
29.5ns/118ns
TO-247-3 HiP
STMicroelectronics
STGW30H60DF
Trench Field Stop
350 µJ
400 µJ
TO-247-3
175 °C
-40 °C
2.4 V
60 A
120 A
Through Hole
260 W
600 V
TO-247
105 nC
10 Ohm
15 V
30 A
400 V
110 ns
50 ns
160 ns
TO-247-3 HiP
STMicroelectronics
STGW30H60DLFB
Trench Field Stop
293 µJ
TO-247-3
175 °C
-55 °C
2 V
60 A
146 ns
120 A
Through Hole
260 W
600 V
TO-247-3
149 nC
10 Ohm
15 V
30 A
400 V
-
TO-247-3 HiP
STMicroelectronics
STGW30N120KD
2.4 mJ
4.3 mJ
TO-247-3
125 °C
-55 ░C
3.85 V
60 A
100 A
Through Hole
220 W
1200 V
TO-247-3
105 nC
10 Ohm
15 V
20 A
960 V
84 ns
INFINEON SPW35N60CFDFKSA1
STMicroelectronics
STGW30NC60WD
181 µJ
305 µJ
TO-247-3
150 °C
-55 °C
2.5 V
60 A
150 A
Through Hole
200 W
600 V
TO-247-3
102 nC
10 Ohm
15 V
20 A
390 V
40 ns
29.5ns/118ns
TO-247-3 HiP
STMicroelectronics
STGW30H60DFB
Trench Field Stop
293 µJ
383 µJ
TO-247-3
175 °C
-55 °C
2 V
60 A
120 A
Through Hole
260 W
600 V
TO-247
149 nC
10 Ohm
15 V
30 A
400 V
53 ns
37 ns
146 ns
STMICROELECTRONICS STGW30M65DF2
STMicroelectronics
STGW30M65DF2
Trench Field Stop
300 µJ
960 µJ
TO-247-3
175 °C
-55 °C
2 V
60 A
120 A
Through Hole
258 W
650 V
TO-247-3
80 nC
10 Ohm
15 V
30 A
400 V
140 ns
31.6 ns
115 ns
TO-247-3 HiP
STMicroelectronics
STGW30N90D
1.66 mJ
4.44 mJ
TO-247-3
150 °C
-55 °C
2.75 V
60 A
135 A
Through Hole
220 W
900 V
TO-247-3
110 nC
10 Ohm
15 V
20 A
900 V
152 ns
29 ns
275 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1694$ 2.99
Tube 1$ 3.43
30$ 2.72
120$ 2.33
510$ 2.07
1020$ 1.77
2010$ 1.67
5010$ 1.60
NewarkEach 1$ 3.82
10$ 3.81
100$ 2.09
500$ 1.83
1200$ 1.78
3000$ 1.73

Description

General part information

STGW30 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.