Discrete Semiconductor Products

STGW30N120KD

Obsolete

STMicroelectronics

IGBT 1200V 60A 220W TO247

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Discrete Semiconductor Products

STGW30N120KD

Obsolete

STMicroelectronics

IGBT 1200V 60A 220W TO247

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW30N120KD

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	105 nC
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	220 W
Reverse Recovery Time (trr)	84 ns
Supplier Device Package	TO-247-3
Switching Energy	2.4 mJ, 4.3 mJ
Test Condition	960 V, 15 V, 10 Ohm, 20 A
Vce(on) (Max) @ Vge, Ic	3.85 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGW30M65DF2 Series

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

Part	Gate Charge	Power - Max [Max]	IGBT Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Switching Energy	Mounting Type	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Test Condition	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Switching Energy [custom]	Switching Energy [custom]	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic [Max]
STMicroelectronics STGW30V60F	163 nC	260 W	Trench Field Stop	TO-247	-55 °C	175 ░C	120 A	233 µJ 383 µJ	Through Hole	45 ns 189 ns	60 A	TO-247-3	600 V	2.3 V	10 Ohm 15 V 30 A 400 V
STMicroelectronics STGW30V60DF	163 nC	258 W	Trench Field Stop	TO-247-3	-55 °C	175 ░C	120 A	233 µJ 383 µJ	Through Hole	45 ns 189 ns	60 A	TO-247-3	600 V	2.3 V	10 Ohm 15 V 30 A 400 V	53 ns
STMicroelectronics STGW30NC60W	102 nC	200 W		TO-247-3	-55 °C	150 °C	150 A	181 µJ 305 µJ	Through Hole		60 A	TO-247-3	600 V	2.5 V	10 Ohm 15 V 20 A 390 V		118 ns	29.5 ns
STMicroelectronics STGW30H60DLFB	149 nC	260 W	Trench Field Stop	TO-247-3	-55 °C	175 ░C	120 A	293 µJ	Through Hole		60 A	TO-247-3	600 V	2 V	10 Ohm 15 V 30 A 400 V				-/146ns
STMicroelectronics STGW30N120KD	105 nC	220 W		TO-247-3	-55 °C	125 ¯C	100 A	2.4 mJ 4.3 mJ	Through Hole		60 A	TO-247-3	1200 V	3.85 V	10 Ohm 15 V 20 A 960 V	84 ns
STMicroelectronics STGW30NC60WD	102 nC	200 W		TO-247-3	-55 °C	150 °C	150 A	181 µJ 305 µJ	Through Hole		60 A	TO-247-3	600 V	2.5 V	10 Ohm 15 V 20 A 390 V	40 ns	118 ns	29.5 ns
STMicroelectronics STGW30H60DFB	149 nC	260 W	Trench Field Stop	TO-247	-55 °C	175 ░C	120 A		Through Hole		60 A	TO-247-3	600 V	2 V	10 Ohm 15 V 30 A 400 V	53 ns		37 ns 146 ns		383 µJ	293 µJ
STMicroelectronics STGW30M65DF2	80 nC	258 W	Trench Field Stop	TO-247-3	-55 °C	175 ░C	120 A	300 µJ 960 µJ	Through Hole		60 A	TO-247-3		2 V	10 Ohm 15 V 30 A 400 V	140 ns	115 ns	31.6 ns				650 V
STMicroelectronics STGW30N90D	110 nC	220 W		TO-247-3	-55 °C	150 °C	135 A	1.66 mJ 4.44 mJ	Through Hole		60 A	TO-247-3			10 Ohm 15 V 20 A 900 V	152 ns	275 ns	29 ns				900 V	2.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGW30M65DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources