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Littelfuse Power Semi TO-263HV 2 2C image
Discrete Semiconductor Products

IXTA3N100D2HV

Active
Littelfuse/Commercial Vehicle Products

MOSFET, 3A, 1KV, 125W, TO-263-3 ROHS COMPLIANT: YES

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Littelfuse Power Semi TO-263HV 2 2C image
Discrete Semiconductor Products

IXTA3N100D2HV

Active
Littelfuse/Commercial Vehicle Products

MOSFET, 3A, 1KV, 125W, TO-263-3 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA3N100D2HV
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)0 V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]37.5 nC
Input Capacitance (Ciss) (Max) @ Vds1020 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageTO-263HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.36
50$ 5.04
100$ 4.32
500$ 3.84
1000$ 3.29
2000$ 3.10
NewarkEach 1$ 7.04
25$ 5.42
100$ 3.80
250$ 3.76
500$ 3.72
1000$ 3.04

Description

General part information

IXTA3N100D2HV Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Documents

Technical documentation and resources