
IXTA3N100D2HV
ActiveMOSFET, 3A, 1KV, 125W, TO-263-3 ROHS COMPLIANT: YES
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IXTA3N100D2HV
ActiveMOSFET, 3A, 1KV, 125W, TO-263-3 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA3N100D2HV |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 37.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 6 Ohm |
| Supplier Device Package | TO-263HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTA3N100D2HV Series
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).
Documents
Technical documentation and resources