Specification	IXTA3N150HV

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1375 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	7.3 Ohm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IXTA3N100D2HV Series

DiscMosfet N-CH Std-HiVoltage TO-263D2

Part	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTA3N50D2	Surface Mount	125 W	1070 pF	1.5 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263AA	MOSFET (Metal Oxide)	500 V	Depletion Mode	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 nC
Littelfuse/Commercial Vehicle Products IXTA3N120	Surface Mount	200 W		4.5 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263AA	MOSFET (Metal Oxide)	1200 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	42 nC	5 V	1350 pF	10 V
Littelfuse/Commercial Vehicle Products IXTA3N150HV	Surface Mount		1375 pF	7.3 Ohm	N-Channel	3 A	-55 °C	150 °C	30 V	TO-263AA	MOSFET (Metal Oxide)	1500 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	38.6 nC	5 V		10 V	250 W
Littelfuse/Commercial Vehicle Products IXTA3N100D2HV	Surface Mount	125 W	1020 pF	6 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263HV	MOSFET (Metal Oxide)	1000 V	Depletion Mode	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4.5 V		0 V		37.5 nC
Littelfuse/Commercial Vehicle Products IXTA3N120-TRL	Surface Mount	200 W		4.5 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263AA	MOSFET (Metal Oxide)	1200 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	42 nC	5 V	1350 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.74
		50	$ 8.69
		100	$ 8.18
		500	$ 7.41
		1000	$ 6.80
LCSC	Piece	1	$ 2.47
		200	$ 0.99
		500	$ 0.95
		1000	$ 0.94
Newark	Each	1	$ 10.02
		5	$ 9.09
		10	$ 8.16
		25	$ 7.23
		100	$ 6.30

Description

General part information

IXTA3N100D2HV Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Documents

Technical documentation and resources

IXTA3N150HV

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IXTA3N150HV

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Technical Specifications

IXTA3N100D2HV Series

Pricing

Description

IXTA3N100D2HV Series

Documents

Product Change Notice EN

Littelfuse ISOPLUS Isolated Discrete Power Semiconductors Application Note

Littelfuse ISOPLUS Isolated Discrete Power Semiconductors Application Note

Datasheet

IXTA3N100D2HV Series