IXTA3N100D2HV Series

DiscMosfet N-CH Std-HiVoltage TO-263D2

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMosfet N-CH Std-HiVoltage TO-263D2

Part	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTA3N50D2	Surface Mount	125 W	1070 pF	1.5 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263AA	MOSFET (Metal Oxide)	500 V	Depletion Mode	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 nC
Littelfuse/Commercial Vehicle Products IXTA3N120	Surface Mount	200 W		4.5 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263AA	MOSFET (Metal Oxide)	1200 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	42 nC	5 V	1350 pF	10 V
Littelfuse/Commercial Vehicle Products IXTA3N150HV	Surface Mount		1375 pF	7.3 Ohm	N-Channel	3 A	-55 °C	150 °C	30 V	TO-263AA	MOSFET (Metal Oxide)	1500 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	38.6 nC	5 V		10 V	250 W
Littelfuse/Commercial Vehicle Products IXTA3N100D2HV	Surface Mount	125 W	1020 pF	6 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263HV	MOSFET (Metal Oxide)	1000 V	Depletion Mode	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4.5 V		0 V		37.5 nC
Littelfuse/Commercial Vehicle Products IXTA3N120-TRL	Surface Mount	200 W		4.5 Ohm	N-Channel	3 A	-55 °C	150 °C	20 V	TO-263AA	MOSFET (Metal Oxide)	1200 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	42 nC	5 V	1350 pF	10 V

Catalog

DiscMosfet N-CH Std-HiVoltage TO-263D2

Key Features

• Normally on operation

• Linear mode tolerant

• Low RDS(on)

• Useable body diode

• Internal standard packages

• UL 94 V-0 Flammability qualified (molding epoxies)

Description

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).