
IXTA3N50D2
ActivePOWER MOSFET, N CHANNEL, 500 V, 3 A, 1.5 OHM, TO-263AA, SURFACE MOUNT
Deep-Dive with AI
Search across all available documentation for this part.

IXTA3N50D2
ActivePOWER MOSFET, N CHANNEL, 500 V, 3 A, 1.5 OHM, TO-263AA, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA3N50D2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 500 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1070 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | TO-263AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
IXTA3N100D2HV Series
DiscMosfet N-CH Std-HiVoltage TO-263D2
| Part | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | FET Feature | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Littelfuse/Commercial Vehicle Products | Surface Mount | 125 W | 1070 pF | 1.5 Ohm | N-Channel | 3 A | -55 °C | 150 °C | 20 V | TO-263AA | MOSFET (Metal Oxide) | 500 V | Depletion Mode | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 40 nC | |||||
Littelfuse/Commercial Vehicle Products | Surface Mount | 200 W | 4.5 Ohm | N-Channel | 3 A | -55 °C | 150 °C | 20 V | TO-263AA | MOSFET (Metal Oxide) | 1200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 42 nC | 5 V | 1350 pF | 10 V | ||||
Littelfuse/Commercial Vehicle Products | Surface Mount | 1375 pF | 7.3 Ohm | N-Channel | 3 A | -55 °C | 150 °C | 30 V | TO-263AA | MOSFET (Metal Oxide) | 1500 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 38.6 nC | 5 V | 10 V | 250 W | ||||
Littelfuse/Commercial Vehicle Products | Surface Mount | 125 W | 1020 pF | 6 Ohm | N-Channel | 3 A | -55 °C | 150 °C | 20 V | TO-263HV | MOSFET (Metal Oxide) | 1000 V | Depletion Mode | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4.5 V | 0 V | 37.5 nC | |||
Littelfuse/Commercial Vehicle Products | Surface Mount | 200 W | 4.5 Ohm | N-Channel | 3 A | -55 °C | 150 °C | 20 V | TO-263AA | MOSFET (Metal Oxide) | 1200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 42 nC | 5 V | 1350 pF | 10 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTA3N100D2HV Series
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).
Documents
Technical documentation and resources