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TO-263AB
Discrete Semiconductor Products

IXTA3N120-TRL

Active
Littelfuse/Commercial Vehicle Products

IXTA3N120 TRL/ TR ROHS COMPLIANT: YES

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TO-263AB
Discrete Semiconductor Products

IXTA3N120-TRL

Active
Littelfuse/Commercial Vehicle Products

IXTA3N120 TRL/ TR ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA3N120-TRL
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs4.5 Ohm
Supplier Device PackageTO-263AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.12
10$ 6.96
100$ 5.80
Digi-Reel® 1$ 8.12
10$ 6.96
100$ 5.80
Tape & Reel (TR) 800$ 5.12
1600$ 4.61
NewarkEach (Supplied on Full Reel) 800$ 4.60
1600$ 4.33
2400$ 4.13

Description

General part information

IXTA3N100D2HV Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Documents

Technical documentation and resources