Discrete Semiconductor Products

NJVMJD31CG

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), SURFACE MOUNT

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Discrete Semiconductor Products

NJVMJD31CG

Active

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), SURFACE MOUNT

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NJVMJD31CG

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.56 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD31C%20(LEGACY%20FAIRCHILD) Series

3.0 A, 100 V NPN Bipolar Power Transistor

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJD31CEITU	TO-252 (DPAK)	100 V	60	3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V
ON Semiconductor MJD31CITU	IPAK	100 V		3 A	IPAK TO-251-3 Short Leads TO-251AA	150 °C	50 µA	3 MHz	1.56 W	NPN	Through Hole	1.2 V	10 hFE
ON Semiconductor MJD31C1	IPAK	100 V		3 A	IPAK TO-251-3 Short Leads TO-251AA		50 µA	3 MHz	1.56 W	NPN	Through Hole	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31T4	DPAK	40 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	15 W	NPN	Surface Mount	1.2 V	10 hFE
ON Semiconductor NJVMJD31CG	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31CT4	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	15 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31CT4G	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31T4G	DPAK	40 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.03
		10	$ 0.64
		100	$ 0.42
		500	$ 0.32
		1000	$ 0.29
		2000	$ 0.27
		5000	$ 0.24
		10000	$ 0.22
Newark	Each	500	$ 0.31
		1000	$ 0.27
		2500	$ 0.22
		10000	$ 0.21
ON Semiconductor	N/A	1	$ 0.22

Description

General part information

MJD31C%20(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.Replacement Active Part Number:MJD31C

Documents

Technical documentation and resources

Datasheet

NJVMJD31CG

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NJVMJD31CG

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Technical Specifications

MJD31C%20(LEGACY%20FAIRCHILD) Series

Pricing

Description

MJD31C%20(LEGACY%20FAIRCHILD) Series

Documents

Datasheet

Datasheet

Package Drawing-369C-DPAK (SINGLE GAUGE) TO-252

Product Change Notice EN

Technical Data Sheet EN

MJD31C%20(LEGACY%20FAIRCHILD) Series