Discrete Semiconductor Products

MJD31C1

Obsolete

ON Semiconductor

TRANS NPN 100V 3A IPAK

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Discrete Semiconductor Products

MJD31C1

Obsolete

ON Semiconductor

TRANS NPN 100V 3A IPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJD31C1

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1.56 W
Supplier Device Package	IPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD31C%20(LEGACY%20FAIRCHILD) Series

3.0 A, 100 V NPN Bipolar Power Transistor

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJD31CEITU	TO-252 (DPAK)	100 V	60	3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V
ON Semiconductor MJD31CITU	IPAK	100 V		3 A	IPAK TO-251-3 Short Leads TO-251AA	150 °C	50 µA	3 MHz	1.56 W	NPN	Through Hole	1.2 V	10 hFE
ON Semiconductor MJD31C1	IPAK	100 V		3 A	IPAK TO-251-3 Short Leads TO-251AA		50 µA	3 MHz	1.56 W	NPN	Through Hole	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31T4	DPAK	40 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	15 W	NPN	Surface Mount	1.2 V	10 hFE
ON Semiconductor NJVMJD31CG	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31CT4	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	15 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31CT4G	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31T4G	DPAK	40 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJD31C%20(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.Replacement Active Part Number:MJD31C

Documents

Technical documentation and resources