
Discrete Semiconductor Products
MJD31CEITU
ActiveON Semiconductor
3.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR
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Discrete Semiconductor Products
MJD31CEITU
ActiveON Semiconductor
3.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD31CEITU |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 1.56 W |
| Supplier Device Package | TO-252 (DPAK) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 952 | $ 0.32 | |
Description
General part information
MJD31C%20(LEGACY%20FAIRCHILD) Series
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.Replacement Active Part Number:MJD31C
Documents
Technical documentation and resources