Zenode.ai Logo
Beta
ISL9N302AS3
Discrete Semiconductor Products

MJD31CEITU

Active
ON Semiconductor

3.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

ISL9N302AS3
Discrete Semiconductor Products

MJD31CEITU

Active
ON Semiconductor

3.0 A, 100 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD31CEITU
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.56 W
Supplier Device PackageTO-252 (DPAK)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 952$ 0.32

Description

General part information

MJD31C%20(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.Replacement Active Part Number:MJD31C

Documents

Technical documentation and resources