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DPAK_369C
Discrete Semiconductor Products

MJD31CT4G

Active
ON Semiconductor

SINGLE BIPOLAR TRANSISTOR, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), 3 PINS, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-369C-DPAK (SINGLE GAUGE) TO-252+1
DPAK_369C
Discrete Semiconductor Products

MJD31CT4G

Active
ON Semiconductor

SINGLE BIPOLAR TRANSISTOR, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), 3 PINS, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-369C-DPAK (SINGLE GAUGE) TO-252+1

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD31CT4G
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 hFE
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.56 W
Supplier Device PackageDPAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

MJD31C%20(LEGACY%20FAIRCHILD) Series

3.0 A, 100 V NPN Bipolar Power Transistor

PartSupplier Device PackageVoltage - Collector Emitter Breakdown (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, Vce [Min]Current - Collector (Ic) (Max) [Max]Package / CaseOperating TemperatureCurrent - Collector Cutoff (Max) [Max]Frequency - TransitionPower - Max [Max]Transistor TypeMounting TypeVce Saturation (Max) @ Ib, IcDC Current Gain (hFE) (Min) @ Ic, VceOperating Temperature [Max]Operating Temperature [Min]
ISL9N302AS3
ON Semiconductor
MJD31CEITU
TO-252 (DPAK)
100 V
60
3 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
150 °C
50 µA
3 MHz
1.56 W
NPN
Surface Mount
1.2 V
I-PAK
ON Semiconductor
MJD31CITU
IPAK
100 V
3 A
IPAK
TO-251-3 Short Leads
TO-251AA
150 °C
50 µA
3 MHz
1.56 W
NPN
Through Hole
1.2 V
10 hFE
IPAK
ON Semiconductor
MJD31C1
IPAK
100 V
3 A
IPAK
TO-251-3 Short Leads
TO-251AA
50 µA
3 MHz
1.56 W
NPN
Through Hole
1.2 V
10 hFE
150 °C
-65 °C
NJVMJD32CG
ON Semiconductor
MJD31T4
DPAK
40 V
3 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
50 µA
3 MHz
15 W
NPN
Surface Mount
1.2 V
10 hFE
DPAK_369C
ON Semiconductor
NJVMJD31CG
DPAK
100 V
3 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
50 µA
3 MHz
1.56 W
NPN
Surface Mount
1.2 V
10 hFE
150 °C
-65 °C
DPAK_369C
ON Semiconductor
MJD31CT4
DPAK
100 V
3 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
50 µA
3 MHz
15 W
NPN
Surface Mount
1.2 V
10 hFE
150 °C
-65 °C
DPAK_369C
ON Semiconductor
MJD31CT4G
DPAK
100 V
3 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
50 µA
3 MHz
1.56 W
NPN
Surface Mount
1.2 V
10 hFE
150 °C
-65 °C
DPAK_369C
ON Semiconductor
MJD31T4G
DPAK
40 V
3 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
50 µA
3 MHz
1.56 W
NPN
Surface Mount
1.2 V
10 hFE
150 °C
-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.60
10$ 0.51
100$ 0.36
500$ 0.28
1000$ 0.23
Digi-Reel® 1$ 0.60
10$ 0.51
100$ 0.36
500$ 0.28
1000$ 0.23
Tape & Reel (TR) 2500$ 0.20
5000$ 0.19
12500$ 0.18
25000$ 0.17
NewarkEach (Supplied on Full Reel) 2500$ 0.34
5000$ 0.33
10000$ 0.31
15000$ 0.30
25000$ 0.29
ON SemiconductorN/A 1$ 0.18

Description

General part information

MJD31C%20(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.Replacement Active Part Number:MJD31C