MJD31C%20(LEGACY%20FAIRCHILD) Series

3.0 A, 100 V NPN Bipolar Power Transistor

Catalog

3.0 A, 100 V NPN Bipolar Power Transistor

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJD31CEITU	TO-252 (DPAK)	100 V	60	3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V
ON Semiconductor MJD31CITU	IPAK	100 V		3 A	IPAK TO-251-3 Short Leads TO-251AA	150 °C	50 µA	3 MHz	1.56 W	NPN	Through Hole	1.2 V	10 hFE
ON Semiconductor MJD31C1	IPAK	100 V		3 A	IPAK TO-251-3 Short Leads TO-251AA		50 µA	3 MHz	1.56 W	NPN	Through Hole	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31T4	DPAK	40 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	15 W	NPN	Surface Mount	1.2 V	10 hFE
ON Semiconductor NJVMJD31CG	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31CT4	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	15 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31CT4G	DPAK	100 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C
ON Semiconductor MJD31T4G	DPAK	40 V		3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		50 µA	3 MHz	1.56 W	NPN	Surface Mount	1.2 V	10 hFE	150 °C	-65 °C

Catalog

3.0 A, 100 V NPN Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("1G"Suffix)

• Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.Replacement Active Part Number:MJD31C